bcx 42, bss 63 1 sep-30-1999 pnp silicon af an swiching transistors ? for general af applications ? high breakdown voltage ? low collector-emitter saturation voltage ? complementary types: bcx 41, bss 64 (npn) 1 2 3 vps05161 type marking pin configuration package bcx 42 bss 63 dks bms 1 = b 1 = b 2 = e 2 = e 3 = c 3 = c sot-23 sot-23 maximum ratings parameter bss 63 symbol unit bcx 42 collector-emitter voltage v ceo 100 v 125 110 125 collector-base voltage v cbo 5 emitter-base voltage v ebo 5 dc collector current i c 800 ma a peak collector current 1 i cm base current i b 100 ma peak base current i bm 200 total power dissipation , t s = 79 c mw 330 p tot t j c junction temperature 150 storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 285 k/w junction - soldering point r thjs 215 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bcx 42, bss 63 2 sep-30-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values typ. max. min. dc characteristics v bss 63 bcx 42 v (br)ceo - - collector-emitter breakdown voltage i c = 10 ma, i b = 0 - - 100 125 - - collector-base breakdown voltage i c = 100 a, i b = 0 v (br)cbo - - 110 125 bss 63 bcx 42 - v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 - 5 - - 100 100 i cbo bss 63 bcx 42 collector cutoff current v cb = 80 v, i e = 0 v cb = 100 v, i e = 0 na - - 20 20 bss 63 bcx 42 - - collector cutoff current v cb = 80 v, i e = 0 , t a = 150 c v cb = 100 v, i e = 0 , t a = 150 c a - - i cbo - 100 emitter cutoff current v eb = 4 v, i c = 0 na - i ebo - - collector cutoff current v ce = 100 v, t a = 85 c v ce = 100 v, t a = 125 c i ceo 10 75 a - - bcx 42 bcx 42 - - - - - dc current gain 1) i c = 100 a, v ce = 1 v i c = 10 ma, v ce = 5 v i c = 20 ma, v ce = 5 v i c = 100 ma, v ce = 1 v i c = 200 ma, v ce = 1 v h fe bcx 42 bss 63 bss 63 bcx 42 bcx 42 - - - - - - 25 30 30 63 40 1) pulse test: t 300 s, d = 2%
bcx 42, bss 63 3 sep-30-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter values unit symbol min. max. typ. dc characteristics - - - - - - 0.9 0.25 0.9 v cesat v bcx 42 bss 63 bss 63 collector-emitter saturation voltage1) i c = 300 ma, i b = 30 ma i c = 25 ma, i b = 2.5 ma i c = 75 ma, i b = 7.5 ma - base-emitter saturation voltage 1) i c = 300 ma, i b = 30 ma bcx 42 - 1.4 v besat ac characteristics mhz - - 150 f t transition frequency i c = 20 ma, v ce = 5 v, f = 20 mhz pf collector-base capacitance v cb = 10 v, f = 1 mhz - 12 c cb -
bcx 42, bss 63 4 sep-30-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0 ehp00428 bcx 42/bss 63 150 50 100 ?c t a s t 100 200 300 mw 400 p tot t t ; as collector current i c = f ( v be ) v ce = 1v 10 0 1 3 bcx 42/bss 63 ehp00429 v be 10 ma 10 10 10 3 2 1 0 -1 5 5 5 v 25 150 -50 2 t a = c ? c ? c ? c permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00430 bcx 42/bss 63 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t transition frequency f t = f ( i c ) v ce = 5v 10 10 10 10 bcx 42/bss 63 ehp00431 f ma mhz 0123 5 t 3 10 10 2 1 10 5 5 5 c
bcx 42, bss 63 5 sep-30-1999 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 400 800 bcx 42/bss 63 ehp00433 v ce sat mv ma 10 3 0 10 10 10 1 10 10 2 10 5 5 5 10 200 600 150 25 -50 -1 c ? c ? c ? c base-emitter saturation voltage i c = f ( v besat ), h fe = 10 10 0 1 3 bcx 42/bss 63 ehp00432 v be sat 10 ma 10 10 10 3 2 1 0 -1 5 5 5 v 25 150 -50 2 c ? c ? c ? c collector cutoff current i cbo = f ( t a ) v cb = 100v 10 0 50 100 150 bcx 42/bss 63 ehp00434 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ ? c dc current gain h fe = f ( i c ) v ce = 1v 10 10 10 10 bcx 42/bss 63 ehp00435 h ma -1 0 2 3 fe 3 10 10 2 1 10 5 5 1 10 150 25 -50 555 c ? c ? c ? c
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